BYWF29-200HE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A ITO220AC
$0.79
Available to order
Reference Price (USD)
1+
$0.79200
500+
$0.78408
1000+
$0.77616
1500+
$0.76824
2000+
$0.76032
2500+
$0.7524
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the BYWF29-200HE3_A/P single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the BYWF29-200HE3_A/P delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Vishay General Semiconductor - Diodes Division's BYWF29-200HE3_A/P is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
Related Products
Rohm Semiconductor
RB510SM-40T2R
Panjit International Inc.
ED302S_L2_00001
onsemi
SBRS8120NT3G
Diodes Incorporated
BAS21W-7
NXP USA Inc.
BAT74V/DG115
onsemi
NRVBA120ET3G-VF01
Nexperia USA Inc.
BAS416,115
Vishay General Semiconductor - Diodes Division
S1FLM-M-18
Global Power Technology-GPT
G3S17010A
Vishay General Semiconductor - Diodes Division