BZD17C110P-E3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 110V 800MW DO219AB
$0.16
Available to order
Reference Price (USD)
30,000+
$0.12390
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZD17C110P-E3-08 by Vishay General Semiconductor - Diodes Division is a high-performance single Zener diode, part of the Discrete Semiconductor Products lineup. Designed for accuracy and reliability, this diode features low dynamic impedance and excellent temperature stability. It is widely used in voltage reference circuits, power supplies, and signal conditioning applications. For instance, the BZD17C110P-E3-08 is essential in medical imaging devices, where it maintains precise voltage levels for accurate diagnostics. It also plays a critical role in aerospace electronics, ensuring reliable operation under extreme conditions. Furthermore, it is used in consumer electronics, such as smart TVs and home appliances, to enhance performance and longevity.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 110 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 1 µA @ 82 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Vishay General Semiconductor - Diodes Division
BZG03C43-HM3-18
Panjit International Inc.
PZS515V1BCH-AU_R1_000A1
Rohm Semiconductor
TDZVTR20
Vishay General Semiconductor - Diodes Division
GDZ4V3B-E3-08
Renesas Electronics America Inc
RD6.2E-T1-AZ
Comchip Technology
CZRF52C2V2
Microchip Technology
JANS1N6326US
Microsemi Corporation
JANTX1N4964CUS
Diodes Incorporated
DDZ9681-7
Nexperia USA Inc.