BZD17C11P-E3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 800MW DO219AB
$0.15
Available to order
Reference Price (USD)
30,000+
$0.11890
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the BZD17C11P-E3-08 Zener diode from Vishay General Semiconductor - Diodes Division, a standout in the Discrete Semiconductor Products category. This single Zener diode is designed for high-performance voltage regulation, with features like sharp breakdown voltage and minimal power dissipation. It is widely used in consumer electronics, such as gaming consoles and smart home devices, to ensure stable operation. The BZD17C11P-E3-08 is also integral to automotive systems, where it safeguards electronic components from voltage fluctuations. Additionally, it finds applications in medical equipment, providing reliable voltage references for diagnostic devices and patient monitors.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 11 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Fairchild Semiconductor
1N959B
Microchip Technology
1N5937BP/TR8
onsemi
SMMSZ4704T1G
Renesas Electronics America Inc
RD30F
Microchip Technology
JAN1N4962DUS
Vishay General Semiconductor - Diodes Division
BZG03C82-M3-08
onsemi
MMBZ5235ELT1G
Microchip Technology
CDLL4684/TR
Microsemi Corporation
1N4753AG
Microchip Technology