BZD17C12P-E3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 800MW DO219AB
$0.57
Available to order
Reference Price (USD)
3,000+
$0.16807
6,000+
$0.15913
15,000+
$0.15019
30,000+
$0.13946
75,000+
$0.13499
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZD17C12P-E3-08 by Vishay General Semiconductor - Diodes Division is a top-tier single Zener diode, part of the Discrete Semiconductor Products family. Renowned for its accuracy and efficiency, this diode is a go-to solution for voltage regulation needs. Its key attributes include a tight voltage tolerance, minimal noise, and high power dissipation capacity. The BZD17C12P-E3-08 excels in applications like voltage reference circuits, power management systems, and signal conditioning. For example, it is extensively used in IoT devices, ensuring stable operation by maintaining precise voltage levels. Additionally, it plays a vital role in aerospace and defense electronics, where reliability under extreme conditions is crucial.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 12 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Diodes Incorporated
BZT52C7V5TQ-7-F
Microchip Technology
JANTX1N3824CUR-1/TR
Diodes Incorporated
BZT52C2V7LP-7
Comchip Technology
AMMSZ5237A-HF
Vishay General Semiconductor - Diodes Division
BZD27B13P-M3-08
Renesas Electronics America Inc
HZS12A2LRX-E
Diodes Incorporated
BZX84C13T-7-F
Microchip Technology
JAN1N973DUR-1/TR
Solid State Inc.
1N3309A
NXP USA Inc.