BZD17C33P-E3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 33V 800MW DO219AB
$0.15
Available to order
Reference Price (USD)
30,000+
$0.11571
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZD17C33P-E3-08 by Vishay General Semiconductor - Diodes Division is a high-performance single Zener diode, part of the Discrete Semiconductor Products lineup. Designed for accuracy and reliability, this diode features low dynamic impedance and excellent temperature stability. It is widely used in voltage reference circuits, power supplies, and signal conditioning applications. For instance, the BZD17C33P-E3-08 is essential in medical imaging devices, where it maintains precise voltage levels for accurate diagnostics. It also plays a critical role in aerospace electronics, ensuring reliable operation under extreme conditions. Furthermore, it is used in consumer electronics, such as smart TVs and home appliances, to enhance performance and longevity.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 33 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 1 µA @ 24 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Microchip Technology
CDLL5950C
Microchip Technology
JANTX1N5522DUR-1/TR
Microchip Technology
JANTX1N4621C-1/TR
Renesas Electronics America Inc
HZ6A1TD-E
Vishay General Semiconductor - Diodes Division
TLZ33-GS08
Vishay General Semiconductor - Diodes Division
MMSZ4707-G3-08
Panjit International Inc.
PZS5119BAS_R1_00001
Microchip Technology
JANTX1N5524BUR-1
Panjit International Inc.
PZ1AL4V3B_R1_00001
onsemi