BZD27B10P-HE3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 800MW DO219AB
$0.12
Available to order
Reference Price (USD)
30,000+
$0.09975
Exquisite packaging
Discount
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The BZD27B10P-HE3-08 Zener diode from Vishay General Semiconductor - Diodes Division is a top choice in the Discrete Semiconductor Products category. This single Zener diode is engineered for superior voltage regulation, with features like high power dissipation and low leakage current. It is ideal for applications in telecommunications, where it stabilizes voltage levels in base stations and network equipment. The BZD27B10P-HE3-08 is also used in automotive systems, protecting electronic control units from voltage spikes. Additionally, it finds applications in industrial power supplies, ensuring consistent performance in harsh environments. Its reliability and efficiency make it a preferred component in both commercial and industrial electronics.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 10 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 4 Ohms
- Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
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