BZD27B10P-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 800MW DO219AB
$0.12
Available to order
Reference Price (USD)
50,000+
$0.09600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZD27B10P-HE3-18 by Vishay General Semiconductor - Diodes Division is a high-performance single Zener diode, part of the Discrete Semiconductor Products lineup. Designed for accuracy and reliability, this diode features low dynamic impedance and excellent temperature stability. It is widely used in voltage reference circuits, power supplies, and signal conditioning applications. For instance, the BZD27B10P-HE3-18 is essential in medical imaging devices, where it maintains precise voltage levels for accurate diagnostics. It also plays a critical role in aerospace electronics, ensuring reliable operation under extreme conditions. Furthermore, it is used in consumer electronics, such as smart TVs and home appliances, to enhance performance and longevity.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 10 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 4 Ohms
- Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Micro Commercial Co
3EZ33D5-TP
Microchip Technology
JAN1N4129UR-1
Nexperia USA Inc.
PDZ20BGWX
Vishay General Semiconductor - Diodes Division
MMSZ5245C-G3-18
NTE Electronics, Inc
NTE5049A
Microchip Technology
JAN1N755AUR-1
Microchip Technology
1N4740AP/TR12
Vishay General Semiconductor - Diodes Division
BZD27B15P-E3-08
Panjit International Inc.
BZT52-B22-AU_R1_000A1
onsemi