BZD27B3V9P-M3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 800MW DO219AB
$0.12
Available to order
Reference Price (USD)
50,000+
$0.08960
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the BZD27B3V9P-M3-18 Zener diode from Vishay General Semiconductor - Diodes Division is a critical component in the Discrete Semiconductor Products category. This single Zener diode is designed to deliver unmatched voltage regulation, with features such as high surge current capability and low dynamic impedance. It is particularly suited for applications in automotive electronics, where it protects ECUs and sensors from voltage surges. The BZD27B3V9P-M3-18 is also widely used in industrial automation, providing stable voltage references for PLCs and motor drives. Its versatility extends to consumer electronics, where it ensures the longevity of devices like smartphones and laptops by preventing voltage overloads.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 3.9 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 8 Ohms
- Current - Reverse Leakage @ Vr: 50 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Microchip Technology
1N5554/TR
Microchip Technology
JANTX1N3040BUR-1/TR
Microchip Technology
JANTX1N4107C-1
Rohm Semiconductor
UDZLVFHTE-1751
Solid State Inc.
BZY91C56R
Renesas Electronics America Inc
HZ30-2J-E
Microchip Technology
1PMT5936/TR13
Solid State Inc.
1N3314
Renesas Electronics America Inc
HZS7B1LTA-E
onsemi