BZD27B9V1P-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 800MW DO219AB
$0.12
Available to order
Reference Price (USD)
50,000+
$0.09600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZD27B9V1P-HE3-18 by Vishay General Semiconductor - Diodes Division is a premium single Zener diode, part of the Discrete Semiconductor Products range. This diode is crafted for precision and reliability, offering features like excellent temperature stability and low reverse leakage current. It is ideal for applications requiring consistent voltage regulation, such as in power supplies for LED lighting and audio amplifiers. The BZD27B9V1P-HE3-18 is also a key component in telecommunications infrastructure, where it maintains signal integrity by stabilizing voltage levels. Furthermore, it is used in renewable energy systems, such as solar panels and wind turbines, to protect against voltage spikes and ensure efficient energy conversion.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 9.1 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 4 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 5 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Diodes Incorporated
BZX84C27S-7
Microchip Technology
CDLL5278B/TR
Microchip Technology
CDLL5545/TR
Fairchild Semiconductor
MMBZ5252B
Panasonic Electronic Components
MAZ23600AG
Vishay General Semiconductor - Diodes Division
BZT55B43-GS18
Microchip Technology
JANTX1N4626-1
Microchip Technology
JANTXV1N3025BUR-1/TR
Panjit International Inc.
BZX84B5V6-AU_R1_000A1
Panjit International Inc.