BZD27C110P-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 110V 800MW DO219AB
$0.17
Available to order
Reference Price (USD)
50,000+
$0.12575
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the BZD27C110P-HE3-18 Zener diode from Vishay General Semiconductor - Diodes Division is a critical component in the Discrete Semiconductor Products category. This single Zener diode is designed to deliver unmatched voltage regulation, with features such as high surge current capability and low dynamic impedance. It is particularly suited for applications in automotive electronics, where it protects ECUs and sensors from voltage surges. The BZD27C110P-HE3-18 is also widely used in industrial automation, providing stable voltage references for PLCs and motor drives. Its versatility extends to consumer electronics, where it ensures the longevity of devices like smartphones and laptops by preventing voltage overloads.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 110 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 250 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 82 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Microchip Technology
CDLL5261/TR
Vishay General Semiconductor - Diodes Division
BZD27B12P-E3-08
Nexperia USA Inc.
BZX84W-B5V6F
Microchip Technology
1PMT4116/TR13
Vishay General Semiconductor - Diodes Division
BZX85C6V8-TAP
Microchip Technology
1N5941CP/TR8
Diotec Semiconductor
3EZ11
Vishay General Semiconductor - Diodes Division
BZX384C75-HE3-08
Renesas Electronics America Inc
HZK30TR-S-E
Vishay General Semiconductor - Diodes Division