BZD27C43P-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 43V 800MW DO219AB
$0.15
Available to order
Reference Price (USD)
50,000+
$0.11638
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZD27C43P-HE3-18 by Vishay General Semiconductor - Diodes Division is a high-performance single Zener diode, part of the Discrete Semiconductor Products lineup. Designed for accuracy and reliability, this diode features low dynamic impedance and excellent temperature stability. It is widely used in voltage reference circuits, power supplies, and signal conditioning applications. For instance, the BZD27C43P-HE3-18 is essential in medical imaging devices, where it maintains precise voltage levels for accurate diagnostics. It also plays a critical role in aerospace electronics, ensuring reliable operation under extreme conditions. Furthermore, it is used in consumer electronics, such as smart TVs and home appliances, to enhance performance and longevity.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 43 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 45 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 33 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
onsemi
MM3Z20VT1G
Rohm Semiconductor
UDZVTE-1716B
Panjit International Inc.
1N5364B_R2_00001
onsemi
MM5Z12VT5G
Microchip Technology
CDLL3828
Nexperia USA Inc.
BZT52-B20X
Microchip Technology
1N986A
Renesas Electronics America Inc
HZS6A1L-JTA-E
Microchip Technology
JANTXV1N3020D-1
Nexperia USA Inc.