BZD27C51P-HE3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 800MW DO219AB
$0.48
Available to order
Reference Price (USD)
1+
$0.48000
500+
$0.4752
1000+
$0.4704
1500+
$0.4656
2000+
$0.4608
2500+
$0.456
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BZD27C51P-HE3-08 Zener diode by Vishay General Semiconductor - Diodes Division, a standout in the Discrete Semiconductor Products lineup. This single Zener diode is engineered for precise voltage regulation, featuring a robust design that ensures long-term durability. With its low leakage current and high surge capability, the BZD27C51P-HE3-08 is perfect for critical applications. Typical uses include voltage stabilization in consumer electronics, such as TVs and audio equipment, as well as in medical devices where consistent performance is paramount. The BZD27C51P-HE3-08 is also a preferred choice for circuit protection in renewable energy systems, safeguarding inverters and charge controllers from voltage fluctuations.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 51 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 39 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Microchip Technology
SMAJ4755E3/TR13
Microchip Technology
JANHCA1N4125
Microchip Technology
JAN1N4578AUR-1/TR
Microchip Technology
JANTXV1N5528D-1/TR
Micro Commercial Co
BZT52C18T-TP
Microchip Technology
1N5926APE3/TR8
Microchip Technology
SMBJ5372B/TR13
Diodes Incorporated
MMBZ5259BW-7-F
Microchip Technology
CDLL976B
Rohm Semiconductor