BZD27C5V6P-E3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 800MW DO219AB
$0.57
Available to order
Reference Price (USD)
10,000+
$0.15019
30,000+
$0.13946
50,000+
$0.13499
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZD27C5V6P-E3-18 by Vishay General Semiconductor - Diodes Division is a high-performance single Zener diode, part of the Discrete Semiconductor Products lineup. Designed for accuracy and reliability, this diode features low dynamic impedance and excellent temperature stability. It is widely used in voltage reference circuits, power supplies, and signal conditioning applications. For instance, the BZD27C5V6P-E3-18 is essential in medical imaging devices, where it maintains precise voltage levels for accurate diagnostics. It also plays a critical role in aerospace electronics, ensuring reliable operation under extreme conditions. Furthermore, it is used in consumer electronics, such as smart TVs and home appliances, to enhance performance and longevity.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 5.6 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 4 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 2 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Taiwan Semiconductor Corporation
1SMB5932H
Vishay General Semiconductor - Diodes Division
BZX384C13-E3-18
Central Semiconductor Corp
CMSZ5252B TR TIN/LEAD
Panasonic Electronic Components
MAZ30430ML
Taiwan Semiconductor Corporation
BZD27C220PW
Comchip Technology
CZRA4750-G
Microchip Technology
JANTX1N982B-1
Diodes Incorporated
MMBZ5254BW-7
Microchip Technology
JANTX1N4472D
Microchip Technology