BZD27C6V2P-HE3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 800MW DO219AB
$0.44
Available to order
Reference Price (USD)
30,000+
$0.13907
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZD27C6V2P-HE3-08 by Vishay General Semiconductor - Diodes Division is a high-quality single Zener diode, part of the Discrete Semiconductor Products family. Known for its precision and durability, this diode is perfect for voltage regulation in demanding environments. Key features include high power dissipation, low impedance, and excellent thermal stability. The BZD27C6V2P-HE3-08 is commonly used in industrial machinery, where it ensures consistent voltage levels for control systems and sensors. It is also a preferred choice for telecommunications equipment, maintaining signal clarity by preventing voltage drops. Moreover, it is employed in consumer electronics, such as wearables and tablets, to enhance device reliability.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 6.2 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 3 Ohms
- Current - Reverse Leakage @ Vr: 5 µA @ 2 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Renesas Electronics America Inc
HZ20-1TD-E
Vishay General Semiconductor - Diodes Division
SMZG3792BHE3/52
onsemi
BZX84C47ET1
Nexperia USA Inc.
PDZ3.0B,115
Microchip Technology
JANTX1N3041BUR-1
Taiwan Semiconductor Corporation
BZD27C51PHRVG
Vishay General Semiconductor - Diodes Division
MMSZ4712-HE3-08
Microchip Technology
1N4130UR
Renesas Electronics America Inc
HZ6A1LTA-E
onsemi