BZT52B2V4-E3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 410MW SOD123
$0.04
Available to order
Reference Price (USD)
1+
$0.04488
500+
$0.0444312
1000+
$0.0439824
1500+
$0.0435336
2000+
$0.0430848
2500+
$0.042636
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZT52B2V4-E3-08 by Vishay General Semiconductor - Diodes Division is a high-performance single Zener diode, part of the Discrete Semiconductor Products lineup. Designed for accuracy and reliability, this diode features low dynamic impedance and excellent temperature stability. It is widely used in voltage reference circuits, power supplies, and signal conditioning applications. For instance, the BZT52B2V4-E3-08 is essential in medical imaging devices, where it maintains precise voltage levels for accurate diagnostics. It also plays a critical role in aerospace electronics, ensuring reliable operation under extreme conditions. Furthermore, it is used in consumer electronics, such as smart TVs and home appliances, to enhance performance and longevity.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 2.4 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: -
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Comchip Technology
CZRER52C24
NTE Electronics, Inc
1N5386B
Renesas Electronics America Inc
HZS12A3LRX-E
Nexperia USA Inc.
BZV85-C62,113
Microchip Technology
CDLL5523A/TR
Vishay General Semiconductor - Diodes Division
BZG05C56-M3-08
Vishay General Semiconductor - Diodes Division
BZG05C27-M3-08
Microsemi Corporation
SMBJ5952B/TR13
Microchip Technology
SMAJ4739CE3/TR13
Microchip Technology