BZT52B30-HE3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
15,000+
$0.04114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZT52B30-HE3-08 by Vishay General Semiconductor - Diodes Division is a top-tier single Zener diode, part of the Discrete Semiconductor Products family. Renowned for its accuracy and efficiency, this diode is a go-to solution for voltage regulation needs. Its key attributes include a tight voltage tolerance, minimal noise, and high power dissipation capacity. The BZT52B30-HE3-08 excels in applications like voltage reference circuits, power management systems, and signal conditioning. For example, it is extensively used in IoT devices, ensuring stable operation by maintaining precise voltage levels. Additionally, it plays a vital role in aerospace and defense electronics, where reliability under extreme conditions is crucial.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 30 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 35 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 22.5 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Panjit International Inc.
1SMC5358_R1_00001
Microchip Technology
JANTXV1N5523CUR-1/TR
onsemi
MMSZ5244BT1
Nexperia USA Inc.
BZX84W-C6V2F
Microchip Technology
JAN1N4462D
Vishay General Semiconductor - Diodes Division
BZX384B3V0-HE3-08
Microchip Technology
JANTX1N3045BUR-1/TR
Micro Commercial Co
1N6006B-TP
Diotec Semiconductor
BZT52C4V3
Microchip Technology