BZT52B39-E3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 410MW SOD123
$0.04
Available to order
Reference Price (USD)
1+
$0.04301
500+
$0.0425799
1000+
$0.0421498
1500+
$0.0417197
2000+
$0.0412896
2500+
$0.0408595
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the BZT52B39-E3-18 Zener diode from Vishay General Semiconductor - Diodes Division, a standout in the Discrete Semiconductor Products category. This single Zener diode is designed for high-performance voltage regulation, with features like sharp breakdown voltage and minimal power dissipation. It is widely used in consumer electronics, such as gaming consoles and smart home devices, to ensure stable operation. The BZT52B39-E3-18 is also integral to automotive systems, where it safeguards electronic components from voltage fluctuations. Additionally, it finds applications in medical equipment, providing reliable voltage references for diagnostic devices and patient monitors.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 39 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 50 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 29 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Nexperia USA Inc.
BZX84-B3V6,215
Microchip Technology
JAN1N982C-1/TR
Comchip Technology
ABZT52C2V4-HF
Nexperia USA Inc.
BZV55-C15,135
Microchip Technology
JAN1N3042D-1/TR
Micro Commercial Co
MMXZ5246B-TP
Taiwan Semiconductor Corporation
BZX85C6V8 R0G
Microchip Technology
JAN1N4371C-1/TR
Microchip Technology
1N5919BUR-1
Microchip Technology