BZT52B6V8-HE3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
15,000+
$0.04114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZT52B6V8-HE3-08 from Vishay General Semiconductor - Diodes Division is a high-performance Zener diode designed for precision voltage regulation in various electronic circuits. As part of the Discrete Semiconductor Products category, this single Zener diode offers exceptional stability and reliability, making it ideal for applications requiring consistent voltage reference. Key features include low impedance, sharp breakdown characteristics, and excellent temperature stability. These diodes are widely used in power supplies, voltage clippers, and surge protectors. For instance, the BZT52B6V8-HE3-08 is commonly employed in automotive electronics, telecommunications equipment, and industrial control systems to ensure stable voltage levels and protect sensitive components from voltage spikes.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 6.8 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 4.5 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 3 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Microchip Technology
JANTX1N4135D-1/TR
Microchip Technology
JANTXV1N4622C-1/TR
Microchip Technology
CDLL3030B
Panjit International Inc.
BZT52-C3V9S-AU_R1_000A1
Microchip Technology
JAN1N4990
Vishay General Semiconductor - Diodes Division
BZG05B9V1-HM3-08
Diotec Semiconductor
ZPY1
Taiwan Semiconductor Corporation
1SMB5932
Renesas Electronics America Inc
RD9.1ES-T1-AZ
Microchip Technology