Shopping cart

Subtotal: $0.00

BZT52B6V8-HE3-18

Vishay General Semiconductor - Diodes Division
BZT52B6V8-HE3-18 Preview
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
10,000+
$0.04114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Voltage - Zener (Nom) (Vz): 6.8 V
  • Tolerance: ±2%
  • Power - Max: 410 mW
  • Impedance (Max) (Zzt): 4.5 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 3 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123

Related Products

Microchip Technology

JANS1N4110UR-1/TR

Comchip Technology

MMSZ4682-HF

Microchip Technology

JANTXV1N4970US/TR

Microchip Technology

1N4100UR

Vishay General Semiconductor - Diodes Division

MMSZ5254B-G3-08

Vishay General Semiconductor - Diodes Division

SMZG3791BHE3/52

NTE Electronics, Inc

1N5333B

Vishay General Semiconductor - Diodes Division

BZT52C6V8-HE3-18

Top