BZT52B8V2-E3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 410MW SOD123
$0.04
Available to order
Reference Price (USD)
10,000+
$0.03910
Exquisite packaging
Discount
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The BZT52B8V2-E3-18 by Vishay General Semiconductor - Diodes Division is a high-quality single Zener diode, part of the Discrete Semiconductor Products family. Known for its precision and durability, this diode is perfect for voltage regulation in demanding environments. Key features include high power dissipation, low impedance, and excellent thermal stability. The BZT52B8V2-E3-18 is commonly used in industrial machinery, where it ensures consistent voltage levels for control systems and sensors. It is also a preferred choice for telecommunications equipment, maintaining signal clarity by preventing voltage drops. Moreover, it is employed in consumer electronics, such as wearables and tablets, to enhance device reliability.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 8.2 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 4.5 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 6 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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