BZT52B8V2-G RHG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
3,000+
$0.04514
Exquisite packaging
Discount
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The BZT52B8V2-G RHG Zener diode from Taiwan Semiconductor Corporation is a top choice in the Discrete Semiconductor Products category. This single Zener diode is engineered for superior voltage regulation, with features like high power dissipation and low leakage current. It is ideal for applications in telecommunications, where it stabilizes voltage levels in base stations and network equipment. The BZT52B8V2-G RHG is also used in automotive systems, protecting electronic control units from voltage spikes. Additionally, it finds applications in industrial power supplies, ensuring consistent performance in harsh environments. Its reliability and efficiency make it a preferred component in both commercial and industrial electronics.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 8.2 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 700 nA @ 5 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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