BZT52B8V2-HE3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
15,000+
$0.04671
Exquisite packaging
Discount
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The BZT52B8V2-HE3-08 by Vishay General Semiconductor - Diodes Division is a premium single Zener diode, part of the Discrete Semiconductor Products range. This diode is crafted for precision and reliability, offering features like excellent temperature stability and low reverse leakage current. It is ideal for applications requiring consistent voltage regulation, such as in power supplies for LED lighting and audio amplifiers. The BZT52B8V2-HE3-08 is also a key component in telecommunications infrastructure, where it maintains signal integrity by stabilizing voltage levels. Furthermore, it is used in renewable energy systems, such as solar panels and wind turbines, to protect against voltage spikes and ensure efficient energy conversion.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 8.2 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 4.5 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 6 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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