BZT52B9V1-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
10,000+
$0.04114
Exquisite packaging
Discount
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The BZT52B9V1-HE3-18 by Vishay General Semiconductor - Diodes Division is a top-tier single Zener diode, part of the Discrete Semiconductor Products family. Renowned for its accuracy and efficiency, this diode is a go-to solution for voltage regulation needs. Its key attributes include a tight voltage tolerance, minimal noise, and high power dissipation capacity. The BZT52B9V1-HE3-18 excels in applications like voltage reference circuits, power management systems, and signal conditioning. For example, it is extensively used in IoT devices, ensuring stable operation by maintaining precise voltage levels. Additionally, it plays a vital role in aerospace and defense electronics, where reliability under extreme conditions is crucial.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 9.1 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 4.8 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 7 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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