BZT52C4V7-E3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 410MW SOD123
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZT52C4V7-E3-08 by Vishay General Semiconductor - Diodes Division is a top-tier single Zener diode, part of the Discrete Semiconductor Products family. Renowned for its accuracy and efficiency, this diode is a go-to solution for voltage regulation needs. Its key attributes include a tight voltage tolerance, minimal noise, and high power dissipation capacity. The BZT52C4V7-E3-08 excels in applications like voltage reference circuits, power management systems, and signal conditioning. For example, it is extensively used in IoT devices, ensuring stable operation by maintaining precise voltage levels. Additionally, it plays a vital role in aerospace and defense electronics, where reliability under extreme conditions is crucial.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 4.7 V
- Tolerance: ±5%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 70 Ohms
- Current - Reverse Leakage @ Vr: -
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Microchip Technology
JANTX1N3034BUR-1
Microchip Technology
JANTXV1N747AUR-1/TR
Vishay General Semiconductor - Diodes Division
SMAZ5939B-E3/5A
Microchip Technology
SMBJ5923AE3/TR13
Microchip Technology
1N969B-1E3/TR
Rohm Semiconductor
UDZVFHTE-177.5B
Vishay General Semiconductor - Diodes Division
BZM55C5V6-TR3
Microchip Technology
JAN1N4479D
Vishay General Semiconductor - Diodes Division
BZX84C2V4-HE3-08
Microchip Technology