BZT52H-B4V7,115
Nexperia USA Inc.
Nexperia USA Inc.
DIODE ZENER 4.7V 375MW SOD123F
$0.24
Available to order
Reference Price (USD)
3,000+
$0.05483
6,000+
$0.04838
15,000+
$0.04193
30,000+
$0.03978
75,000+
$0.03763
150,000+
$0.03333
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZT52H-B4V7,115 Zener diode from Nexperia USA Inc. is a top choice in the Discrete Semiconductor Products category. This single Zener diode is engineered for superior voltage regulation, with features like high power dissipation and low leakage current. It is ideal for applications in telecommunications, where it stabilizes voltage levels in base stations and network equipment. The BZT52H-B4V7,115 is also used in automotive systems, protecting electronic control units from voltage spikes. Additionally, it finds applications in industrial power supplies, ensuring consistent performance in harsh environments. Its reliability and efficiency make it a preferred component in both commercial and industrial electronics.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 4.7 V
- Tolerance: ±2%
- Power - Max: 375 mW
- Impedance (Max) (Zzt): 78 Ohms
- Current - Reverse Leakage @ Vr: 3 µA @ 2 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -65°C ~ 150°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
Related Products
Microchip Technology
SMBJ5354B/TR13
Microchip Technology
JAN1N973CUR-1/TR
Microchip Technology
JANS1N4569AUR-1
Microchip Technology
SMBJ5369CE3/TR13
Vishay General Semiconductor - Diodes Division
BZX84B3V6-HE3-08
Microchip Technology
JAN1N3032CUR-1/TR
Microsemi Corporation
JANTX1N4478DUS
Taiwan Semiconductor Corporation
BZD27C24PHRVG
Microchip Technology
JAN1N3018C-1
Rohm Semiconductor