BZX55B3V3-TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 500MW DO35
$0.23
Available to order
Reference Price (USD)
10,000+
$0.03088
30,000+
$0.02928
50,000+
$0.02768
100,000+
$0.02496
250,000+
$0.02448
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZX55B3V3-TAP Zener diode from Vishay General Semiconductor - Diodes Division is a top choice in the Discrete Semiconductor Products category. This single Zener diode is engineered for superior voltage regulation, with features like high power dissipation and low leakage current. It is ideal for applications in telecommunications, where it stabilizes voltage levels in base stations and network equipment. The BZX55B3V3-TAP is also used in automotive systems, protecting electronic control units from voltage spikes. Additionally, it finds applications in industrial power supplies, ensuring consistent performance in harsh environments. Its reliability and efficiency make it a preferred component in both commercial and industrial electronics.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 3.3 V
- Tolerance: ±2%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 90 Ohms
- Current - Reverse Leakage @ Vr: 2 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
Related Products
Microsemi Corporation
1N5225A(DO-35)
Microchip Technology
JANTX1N4105CUR-1
Nexperia USA Inc.
BZX38450-C6V2X
Nexperia USA Inc.
BZX84-C4V3,215
Microchip Technology
JANTXV1N4100-1/TR
Comchip Technology
ABZT52C33-HF
Rohm Semiconductor
UDZTE-178.2B
Vishay General Semiconductor - Diodes Division
BZX84B3V6-E3-08
Vishay General Semiconductor - Diodes Division
ZM4747A-GS08
Vishay General Semiconductor - Diodes Division