BZX55C6V8-TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 500MW DO35
$0.21
Available to order
Reference Price (USD)
10,000+
$0.02600
30,000+
$0.02340
50,000+
$0.02080
100,000+
$0.01950
250,000+
$0.01729
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZX55C6V8-TR Zener diode from Vishay General Semiconductor - Diodes Division is a top choice in the Discrete Semiconductor Products category. This single Zener diode is engineered for superior voltage regulation, with features like high power dissipation and low leakage current. It is ideal for applications in telecommunications, where it stabilizes voltage levels in base stations and network equipment. The BZX55C6V8-TR is also used in automotive systems, protecting electronic control units from voltage spikes. Additionally, it finds applications in industrial power supplies, ensuring consistent performance in harsh environments. Its reliability and efficiency make it a preferred component in both commercial and industrial electronics.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 6.8 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 8 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 3 V
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
Related Products
Microchip Technology
1N4759AP/TR12
Central Semiconductor Corp
1N4736A BK PBFREE
Vishay General Semiconductor - Diodes Division
MMSZ5257C-HE3-08
Microchip Technology
JANTX1N4109D-1/TR
Nexperia USA Inc.
BZT52-B8V2J
Renesas Electronics America Inc
HZU20B2JTRF-E
Vishay General Semiconductor - Diodes Division
MMSZ5267C-HE3-18
Microchip Technology
JANTX1N4960/TR
Vishay General Semiconductor - Diodes Division
TZMC12-M-08
Microchip Technology