CDBGBSC20650-G
Comchip Technology
Comchip Technology
DIODE DUAL SIC 20A 650V TO-247
$8.51
Available to order
Reference Price (USD)
30+
$7.40067
Exquisite packaging
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Introducing Comchip Technology's CDBGBSC20650-G, a game-changing diode array in the Discrete Semiconductor Products category. Specifically engineered for high-frequency rectification, this component minimizes switching losses in SMPS and RF circuits. Its hermetically sealed package provides exceptional moisture resistance for outdoor applications like traffic signal systems and railway electronics. Trust Comchip Technology's decades of semiconductor expertise embedded in every CDBGBSC20650-G for uncompromising performance.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 33A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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