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CMG06(TE12L,Q,M)

Toshiba Semiconductor and Storage
CMG06(TE12L,Q,M) Preview
Toshiba Semiconductor and Storage
DIODE GEN PURP 600V 1A M-FLAT
$0.00
Available to order
Reference Price (USD)
3,000+
$0.10725
Exquisite packaging
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Specifications

  • Product Status: Obsolete
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C

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