CP223-2N3866-WN
Central Semiconductor Corp
Central Semiconductor Corp
RF TRANSISTOR TO-39
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing the CP223-2N3866-WN, a high-performance RF Bipolar Junction Transistor (BJT) from Central Semiconductor Corp, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The CP223-2N3866-WN features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Central Semiconductor Corp for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 500MHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die