CP616-2N5160-WN
Central Semiconductor Corp
Central Semiconductor Corp
RF TRANSISTOR TO-39
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The CP616-2N5160-WN from Central Semiconductor Corp is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the CP616-2N5160-WN is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust Central Semiconductor Corp for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 40V
- Frequency - Transition: 500MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
CEL
NE687M33-T3-A
Microsemi Corporation
68106H
MACOM Technology Solutions
PH9105
Infineon Technologies
BFS 386L6 E6327
Microsemi Corporation
TPR1000
Microsemi Corporation
MS2621H
CEL
2SC3357-T1-RF-A
Microsemi Corporation
MS2322
Microsemi Corporation
MS1582
Microsemi Corporation