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CP798X-CPDM302PH-CT

Central Semiconductor Corp
CP798X-CPDM302PH-CT Preview
Central Semiconductor Corp
MOSFET P-CH 30V 2.4A DIE
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
  • Vgs (Max): 12V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die

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