CSD17313Q2Q1
Texas Instruments
Texas Instruments
MOSFET N-CH 30V 5A 6WSON
$0.84
Available to order
Reference Price (USD)
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$0.8316
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$0.8232
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$0.8148
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$0.8064
2500+
$0.798
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Discover the CSD17313Q2Q1 from Texas Instruments, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the CSD17313Q2Q1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Texas Instruments's cutting-edge technology today.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
- Vgs (Max): +10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WSON (2x2)
- Package / Case: 6-WDFN Exposed Pad
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