CSD19501KCS
Texas Instruments
Texas Instruments
MOSFET N-CH 80V 100A TO220-3
$2.33
Available to order
Reference Price (USD)
1+
$2.00000
10+
$1.80700
50+
$1.61680
100+
$1.45820
500+
$1.14120
1,000+
$0.95100
2,500+
$0.91930
Exquisite packaging
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Enhance your electronic projects with the CSD19501KCS single MOSFET from Texas Instruments. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Texas Instruments's CSD19501KCS for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 217W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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