CSD19532Q5B
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 100A 8VSON
$2.88
Available to order
Reference Price (USD)
1+
$2.88000
500+
$2.8512
1000+
$2.8224
1500+
$2.7936
2000+
$2.7648
2500+
$2.736
Exquisite packaging
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The CSD19532Q5B from Texas Instruments redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the CSD19532Q5B offers the precision and reliability you need. Trust Texas Instruments to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
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