CSD19536KTTT
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
$6.52
Available to order
Reference Price (USD)
1+
$6.52000
500+
$6.4548
1000+
$6.3896
1500+
$6.3244
2000+
$6.2592
2500+
$6.194
Exquisite packaging
Discount
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Optimize your power electronics with the CSD19536KTTT single MOSFET from Texas Instruments. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the CSD19536KTTT combines cutting-edge technology with Texas Instruments's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DDPAK/TO-263-3
- Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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