CSD19538Q2T
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 13.1A 6WSON
$1.36
Available to order
Reference Price (USD)
250+
$0.46532
500+
$0.39600
750+
$0.34651
1,250+
$0.31680
Exquisite packaging
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Discover the CSD19538Q2T from Texas Instruments, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the CSD19538Q2T ensures reliable performance in demanding environments. Upgrade your circuit designs with Texas Instruments's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WSON (2x2)
- Package / Case: 6-WDFN Exposed Pad
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