CSD25481F4
Texas Instruments
Texas Instruments
MOSFET P-CH 20V 2.5A 3PICOSTAR
$0.50
Available to order
Reference Price (USD)
3,000+
$0.10360
6,000+
$0.09800
15,000+
$0.08960
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the CSD25481F4 by Texas Instruments, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The CSD25481F4 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Texas Instruments.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 88mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.913 nC @ 4.5 V
- Vgs (Max): -12V
- Input Capacitance (Ciss) (Max) @ Vds: 189 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PICOSTAR
- Package / Case: 3-XFDFN
Related Products
Microchip Technology
APT10045B2FLLG
Infineon Technologies
IPB120N03S4L03ATMA1
Nexperia USA Inc.
PSMN016-100PS,127
IXYS
IXTA86N20T-TRL
Fairchild Semiconductor
FDN372S
IXYS
IXTR170P10P
Fairchild Semiconductor
FQB16N15TM
Vishay Siliconix
SI7308DN-T1-GE3
Rohm Semiconductor
RQ5C035BCTCL
Diodes Incorporated