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CUHS10F60,H3F

Toshiba Semiconductor and Storage
CUHS10F60,H3F Preview
Toshiba Semiconductor and Storage
SMALL-SIGNAL SCHOTTKY BARRIER DI
$0.46
Available to order
Reference Price (USD)
3,000+
$0.07800
6,000+
$0.07020
15,000+
$0.06240
30,000+
$0.05850
75,000+
$0.05460
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 60 V
  • Capacitance @ Vr, F: 130pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: US2H
  • Operating Temperature - Junction: 150°C (Max)

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