CY14B116N-BA25XI
Infineon Technologies
Infineon Technologies
IC NVSRAM 16MBIT PARALLEL 60FBGA
$27.98
Available to order
Reference Price (USD)
112+
$63.95759
Exquisite packaging
Discount
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The CY14B116N-BA25XI Memory IC by Infineon Technologies is a state-of-the-art solution for data storage and retrieval. Belonging to the Memory category, this IC is engineered to provide high-speed access and large storage capacities, making it ideal for advanced electronic applications. Its robust design ensures durability and consistent performance.
Memory ICs, such as the CY14B116N-BA25XI, are distinguished by their ability to handle large datasets efficiently. These components are essential for systems that demand quick and reliable memory operations. The CY14B116N-BA25XI features advanced technology that minimizes latency and maximizes throughput, catering to high-performance requirements.
Applications of the CY14B116N-BA25XI include data centers, wearable technology, and automotive infotainment systems. For instance, it is used in enterprise servers to support massive data processing and in smartwatches for efficient data management. The CY14B116N-BA25XI is a reliable and high-performing Memory IC for various cutting-edge applications.
Specifications
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-LFBGA
- Supplier Device Package: 60-FBGA (10x18)
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