CY62147GE18-55BVXI
Infineon Technologies
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA
$6.42
Available to order
Reference Price (USD)
1+
$6.92000
10+
$6.36900
25+
$6.23640
50+
$6.21440
100+
$5.57500
480+
$5.40592
960+
$5.04577
1,440+
$4.96125
Exquisite packaging
Discount
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The CY62147GE18-55BVXI from Infineon Technologies is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the CY62147GE18-55BVXI ensures longevity and consistent performance in various environments.
Memory ICs like the CY62147GE18-55BVXI are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the CY62147GE18-55BVXI delivers unmatched reliability and efficiency.
The CY62147GE18-55BVXI is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 1.65V ~ 2.2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (6x8)
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