CY7C1361B-100BZI
Rochester Electronics, LLC

Rochester Electronics, LLC
CACHE SRAM, 256KX36, 8.5NS
$7.80
Available to order
Reference Price (USD)
1+
$7.80000
500+
$7.722
1000+
$7.644
1500+
$7.566
2000+
$7.488
2500+
$7.41
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic designs with the CY7C1361B-100BZI Memory IC from Rochester Electronics, LLC, a leading component in the Memory category. This IC offers unparalleled data storage and access speeds, making it a must-have for high-performance systems. Its innovative architecture ensures efficiency and reliability in diverse operating conditions.
The CY7C1361B-100BZI embodies the essential features of Memory ICs: high capacity, fast operation, and low power consumption. These ICs are pivotal in devices that require rapid data processing, such as digital cameras and communication modules. The CY7C1361B-100BZI excels in these areas, providing consistent and dependable performance.
This Memory IC is extensively used in fields like robotics, industrial control systems, and consumer gadgets. For example, it is a key component in robotic arms that require precise and quick data handling. It also enhances the functionality of smart appliances by enabling efficient memory operations. The CY7C1361B-100BZI is a top-tier choice for Memory ICs in various industries.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)