CY7C1512KV18-200BZXI
Rochester Electronics, LLC
Rochester Electronics, LLC
QDR SRAM, 4MX18, 0.45NS
$102.23
Available to order
Reference Price (USD)
1+
$102.23000
500+
$101.2077
1000+
$100.1854
1500+
$99.1631
2000+
$98.1408
2500+
$97.1185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your systems with the CY7C1512KV18-200BZXI Memory IC from Rochester Electronics, LLC, a superior component in the Memory category. This IC is built to provide fast and reliable data storage, essential for today's high-tech devices. Its cutting-edge technology ensures optimal performance and energy savings.
The CY7C1512KV18-200BZXI showcases the hallmark traits of Memory ICs: high storage density, rapid access times, and robust construction. These ICs are indispensable for devices that handle large amounts of data, such as tablets and networking hardware. The CY7C1512KV18-200BZXI excels in these aspects, offering dependable and efficient memory solutions.
This IC is widely employed in applications like virtual reality systems, automotive navigation, and industrial machinery. For example, it is used in VR headsets to ensure smooth data flow and in car GPS systems for quick route calculations. The CY7C1512KV18-200BZXI is a versatile and high-performance Memory IC for various advanced applications.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 72Mb (4M x 18)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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