CYD01S18V-133BBI
Rochester Electronics, LLC
Rochester Electronics, LLC
DUAL-PORT SRAM, 64KX18, 4NS
$60.00
Available to order
Reference Price (USD)
1+
$60.00000
500+
$59.4
1000+
$58.8
1500+
$58.2
2000+
$57.6
2500+
$57
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the CYD01S18V-133BBI Memory IC by Rochester Electronics, LLC, a cutting-edge solution for your data storage needs. This IC is part of the Memory category, known for its high-density storage and rapid data transfer rates. The CYD01S18V-133BBI is engineered to meet the demands of advanced electronic systems, offering superior performance and energy efficiency.
Memory ICs, including the CYD01S18V-133BBI, are characterized by their ability to store and retrieve data quickly and accurately. These components are vital for systems that require frequent data access, such as computing and communication devices. The CYD01S18V-133BBI stands out with its low latency, high bandwidth, and reliable operation under varying conditions.
Applications of the CYD01S18V-133BBI span across industries, including telecommunications, medical devices, and industrial automation. For example, it is used in servers for data centers, ensuring fast and secure data handling, and in medical equipment where precision and reliability are paramount. The CYD01S18V-133BBI is a trusted choice for professionals seeking high-quality Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Standard
- Memory Size: 1Mb (64K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.7 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
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Rochester Electronics, LLC