CYD02S18V-133BBI
Rochester Electronics, LLC
Rochester Electronics, LLC
DUAL-PORT SRAM, 128KX18
$72.00
Available to order
Reference Price (USD)
1+
$72.00000
500+
$71.28
1000+
$70.56
1500+
$69.84
2000+
$69.12
2500+
$68.4
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The CYD02S18V-133BBI by Rochester Electronics, LLC is a high-efficiency Memory IC designed for modern electronic applications. As part of the Memory category, this IC delivers exceptional data storage and retrieval performance, catering to the needs of high-speed systems. Its advanced design ensures reliability and longevity.
Memory ICs like the CYD02S18V-133BBI are renowned for their high-speed data access and compact sizes. These components are critical for applications that demand quick and accurate memory operations. The CYD02S18V-133BBI stands out with its low power usage and high bandwidth, making it suitable for energy-sensitive devices.
The CYD02S18V-133BBI finds applications in sectors such as healthcare, entertainment, and telecommunications. For instance, it is used in medical imaging devices that require fast data processing and in gaming consoles for seamless performance. Its adaptability and high performance make the CYD02S18V-133BBI a preferred Memory IC for diverse uses.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Standard
- Memory Size: 2Mb (128K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.7 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
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