CYD18S18V18-200BBAXI
Infineon Technologies
Infineon Technologies
IC SRAM 18MBIT PARALLEL 256FBGA
$309.31
Available to order
Reference Price (USD)
1+
$309.31000
500+
$306.2169
1000+
$303.1238
1500+
$300.0307
2000+
$296.9376
2500+
$293.8445
Exquisite packaging
Discount
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Discover the CYD18S18V18-200BBAXI Memory IC by Infineon Technologies, a cutting-edge solution for your data storage needs. This IC is part of the Memory category, known for its high-density storage and rapid data transfer rates. The CYD18S18V18-200BBAXI is engineered to meet the demands of advanced electronic systems, offering superior performance and energy efficiency.
Memory ICs, including the CYD18S18V18-200BBAXI, are characterized by their ability to store and retrieve data quickly and accurately. These components are vital for systems that require frequent data access, such as computing and communication devices. The CYD18S18V18-200BBAXI stands out with its low latency, high bandwidth, and reliable operation under varying conditions.
Applications of the CYD18S18V18-200BBAXI span across industries, including telecommunications, medical devices, and industrial automation. For example, it is used in servers for data centers, ensuring fast and secure data handling, and in medical equipment where precision and reliability are paramount. The CYD18S18V18-200BBAXI is a trusted choice for professionals seeking high-quality Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.3 ns
- Voltage - Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
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