CYD18S36V18-200BBAXI
Infineon Technologies
Infineon Technologies
IC SRAM 18MBIT PARALLEL 256FBGA
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The CYD18S36V18-200BBAXI by Infineon Technologies is a high-efficiency Memory IC designed for modern electronic applications. As part of the Memory category, this IC delivers exceptional data storage and retrieval performance, catering to the needs of high-speed systems. Its advanced design ensures reliability and longevity.
Memory ICs like the CYD18S36V18-200BBAXI are renowned for their high-speed data access and compact sizes. These components are critical for applications that demand quick and accurate memory operations. The CYD18S36V18-200BBAXI stands out with its low power usage and high bandwidth, making it suitable for energy-sensitive devices.
The CYD18S36V18-200BBAXI finds applications in sectors such as healthcare, entertainment, and telecommunications. For instance, it is used in medical imaging devices that require fast data processing and in gaming consoles for seamless performance. Its adaptability and high performance make the CYD18S36V18-200BBAXI a preferred Memory IC for diverse uses.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.3 ns
- Voltage - Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
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