D64ES5
Harris Corporation
Harris Corporation
TRANS NPN DARL 400V 20A TO3
$5.25
Available to order
Reference Price (USD)
1+
$5.25000
500+
$5.1975
1000+
$5.145
1500+
$5.0925
2000+
$5.04
2500+
$4.9875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The D64ES5 Bipolar Junction Transistor (BJT) by Harris Corporation is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the D64ES5 provides consistent performance in demanding applications. Choose Harris Corporation for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 30A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10A, 5V
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
Related Products
Microsemi Corporation
2N2221AUB
onsemi
2SA1338-6-TB-E
Microchip Technology
JANS2N5151U3
Microchip Technology
JANSD2N2218
Microchip Technology
JANS2N2484UA
Microchip Technology
2N3506AL
Microchip Technology
2N5760
Sanyo
2SC4455Q-AA
Microchip Technology
2N3779
Microchip Technology