D650S12TXPSA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 1.2KV 620A
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Enhance your circuit performance with the D650S12TXPSA1 single rectifier diode from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the D650S12TXPSA1 delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Infineon Technologies's D650S12TXPSA1 is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 620A
- Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5.3 µs
- Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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