DB103G
GeneSiC Semiconductor
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 200V 1A DB
$1.43
Available to order
Reference Price (USD)
1+
$0.69000
10+
$0.58300
25+
$0.51040
100+
$0.43760
250+
$0.37924
500+
$0.32090
1,000+
$0.24796
2,500+
$0.22608
5,000+
$0.21150
Exquisite packaging
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Optimize your power conversion systems with the DB103G bridge rectifier diode from GeneSiC Semiconductor. This high-efficiency diode, part of the Diodes - Bridge Rectifiers subcategory, ensures minimal energy loss and maximum reliability. Ideal for use in telecommunications, medical devices, and automotive electronics, the DB103G offers fast switching and low forward voltage. GeneSiC Semiconductor's dedication to innovation in Discrete Semiconductor Products means you get a component that outperforms the competition. Upgrade your designs with the DB103G for unmatched performance.
Specifications
- Product Status: Active
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200 V
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-EDIP (0.321", 8.15mm)
- Supplier Device Package: DB
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